Our equipment

011.fw

Other equipment:

  • A stylus-type surface shape measuring instrument (DEKTAK XT-A, ULVAC)
  • Stereoscopic microscope (SZX16-3151, Olympus)
  • System industry microscope (BX51M-N33MB, Olympus)
  • UV-visible spectrophotometer (UV-1600PC, Shimadzu)
  • UV type thermal lens microscope system (Micro Chemical Engineering)
  • Micro-chip experiment station (Micro Chemical Engineering)
  • High temperature device (DN400, Yamato Kagaku)
  • Draft chamber

 

DEPOSITION

▲Top

Sputter deposition system

Multiple Cathode Magnetron Sputtering System, CFS-4EP-LL
Manufacturer: Shibaura Mechatronics Co., Ltd.

Main applications and features:

  • Easy operation and maintenance, compact equipment, and feature rich control panel
  • Clean side sputtering and load lock chamber,
  • Uniform film thickness distribution of sputtering source over a wide area (± 5% (SiO2) in 170mm wafer diameter)

Location: NANOBIC Clean Room

Specifications:

  • Sputtering method: side sputtering Sputter source: 3inch × 3 (4)
  • Holder size: φ220
  • Ultimate pressure: 5 × 10-4 Pa or less
  • Exhausting time: 10 minutes, 7 × 10-3 Pa or less
  • Temperature: max. 300°C (600°C)

Fee:

Regular fee: 9,600 yen / hour
Member’s fee: 4,800 yen / hour

image1

 

▲Top

Ion Beam Sputter Deposition System

Electron-Cyclotron Resonance (ECR) Ion Beam Sputter Deposition System, EIS-230W
Manufacturer: Elionix Co.

Main applications and features:

  • Ion beam source: two sputtering and one assist beam source, total of three equipped,
  • Deposition of single-layer of pure and composite film as well as multi-layer film,
  • Multitarget sputtering method allows for strict control of thin film composition and epitaxial growth of deposited material.

Location: NANOBIC Clean Room

Specifications:

  • Ion gun: Electron-Cyclotron Resonance (ECR) ion beam source
  • Ionized gas: Ar
  • Accelerating voltage: 10V~3000V (continuously variable)
  • Film deposition rate: 4nm/min (Pt)
  • Film thickness uniformity deviation: within ± 5% (φ40mm)
  • Sputtering beam energy: 1,000~3,000eV
  • Sputtering beam stability: ± 3% / 2Hour
  • Assist beam energy: 10~200eV
  • Sputtering beam stability: ± 3% / Hour
  • Ion beam effective diameter: φ20mm (FWHM35mm)
  • Target holder: simultaneous mountable number of targets: three
  • Target size: 100 × 80mm
  • Wafer size: φ50mm
  • Target material: Al, Pt, Ti, Ni, Cr, others

Fee:

Regular fee: 9,600 yen / hour
Member’s fee: 4,800 yen / hour

image2

 

▲Top

Deposition system

Parylene Deposition System PDS-2010
Manufacturer: Japan Parylene Co., Ltd.

Main applications and features:

  • Parylene coating

Location: KBIC, Room 102

Specifications:

  • Standard deposition chamber size: diameter 300mm, height 300mm,
  • Effective chamber volume: diameter 215mm, height 270mm

Fee: Regular fee: 3,400 yen / hour
Member’s fee: 1,700 yen / hour

image3

 

▲Top

Cluster-type spin coater and developer

Cluster-type spin coater and developer GAMMA
Manufacturer: SUSS MicroTec Inc.

Main applications and features:

  • Photoresist spin- and spray coating, developing, baking, vapor priming,
  • Fully automated processing,
  • High uniformity and reproducibility,
  • Simultaneous processing of 25 to 50 wafers.

Location: NANOBIC Yellow Room

Specifications:

  • Substrate size: 2, 3, 4 inch wafers, non-standard substrates,
  • Wafer handling: fully automatic, customized recipes can be created,
  • Additional dispense capability: motorized syringe dispenser for applications where small resist amounts are available,
  • Baking temperature range: 60 ~250 °C,
  • Spin coating uniformity: within ± 1.0% (film thickness of 10 μm).

Fee: Regular fee: 11,200 yen / hour
Member’s fee: 5,600 yen / hour

Cluster-type spin coater and developer GAMMA

 

▲Top

Spin Coater

Spin Coater, MS-A100
Manufacturer: Mikasa Co., Ltd.

Main applications and features:

  • Coating a photoresist layer on a substrate by spin coating.

Location: NANOBIC Yellow Room

Specifications:

  • Deposition method: spin coating,
  • Sample size: up to φ100mm, 1mm thick maximum
  • Wafer holding system: vacuum hold and chuck,
  • Rotational speed: 50 ~ 5000rpm

Fee: Regular fee: 1,400 yen / hour
Member’s fee: 700 yen / hour

 spin coater MS-A100

 

▲Top

Spin Coater

Spin Coater, MS-A200
Manufacturer: Mikasa Co., Ltd.

Main applications and features:

  • Coating a photoresist layer on a substrate by spin coating.

Location: NANOBIC Yellow Room

Specifications:

  • Deposition method: spin coating,
  • Sample size: up to φ200mm, 1mm thick maximum
  • Wafer holding system: vacuum hold and chuck,
  • Rotational speed: 50 ~ 5000rpm

Fee: Regular fee: 1,400 yen / hour
Member’s fee: 700 yen / hour

spin coater MS-A200

 

▲Top

Cleaning equipment – Spin Dryer

Spin Dryer, SPD-160RN
Manufacturer: Kokusan Co.
Distributor: Air Brown Co., Ltd.

Main applications and features:

  • Spin-rinser-dryer for cleaning wafers,
  • Spins the wafers and uses deionized water and nitrogen to clean and dry wafers and chamber.

Location: NANOBIC Clean Room

Specifications:

  • Carrier size: standard 6 inches, custom size
  • Rotational speed: up to 1500rpm (rinse), maximum 3500rpm,
  • Ultra-pure deionized water and N2 inlet ports.

Fee:
Regular fee: 2,200 yen / hour
Member’s fee: 1,100 yen / hour

Spin Dryer SPD-160RN

 

▲Top

Gas Plasma Asher/Etcher/Cleaner

Gas Plasma Device, PR510
Manufacturer: Yamato Scientific Co., Ltd.

Main applications and features:

  • Removal of the photoresist, cleaning of components, surface treatment and activation,
  • Barrel type of direct plasma,
  • Compact design with a small size HF generator and an oscillation section integrated with a part of reaction chamber.

Location: NANOBIC Clean Room

Specifications:

  • Method: barrel type of direct plasma (DP),
  • Reaction gas: Oxygen
  • Power: 500W maximum,
  • Oscillating frequency: 13.56MHz,
  • Reaction chamber: φ 215 x 305 mm.

Fee:
Regular fee: 2,200 yen / hour
Member’s fee: 1,100 yen / hour

Gas Plasma Device PR510

TRANSCRIPTION

▲Top

Electron Beam Lithography System

Ultra-high-Precision Electron Beam Lithography System ELS-7800K
Manufacturer: Co. Elionix

Main applications and features:

  • High precision and high stability Electron Beam Litography,
  • With the accelerating voltage up to 80kV,the electron beam of 2 nm diameter provides long hour stability,
  • Ultra-fine pattern of 8nm can be exposed with the commercially available resin.

Location: NANOBIC Yellow Room

Specifications:

  • Electron gun emitter: ZrO/W thermal field emitter,
  • Accelerating voltage: 25, 50, and 80 kV,
  • Minimum diameter of electron beam: 2.0 nm diameter (at 80kV),
  • Minimum line width: 8nm and less,
  • Beam current: 5 × 10-12 ~ 2 × 10-9 A,
  • Drawing area size: 2,400mm × 2,400mm (25kV only), 1,200mm × 1,200mm, 600mm × 600mm, 300mm × 300mm, 150mm × 150mm, 75mm × 75mm,
  • Beam position control: up to 240,000 × 240,000 (18-bit DAC),
  • Beam positioning resolution:
  • 0.31nm (drawin area 75mm × 75mm),
  • 10nm (drawing area 2,400mm × 2,400mm),
  • Scan rate: 0.1 ms/step ~ 3,200 ms/step (typ.), 0.05ms/step (minimum),
  • Field stitching accuracy: 40nm or less,
  • Maximum sample size: 6″ diameter wafer or 6-inch square mask

Fee:

Regular fee: 15,200 yen / hour
Member’s fee: 7,600 yen / hour

Electron Beam Lithography System ELS-7800K

 

▲Top

Laser Lithography System

Laser Direct Writing System DWL66fs
Manufacturer: Heiderberg Instruments Mikrotechnik
Distributor: Japan Laser Co.

Main applications and features:

  • High resolution pattern generator for low volume mask making and direct writing.

Location: NANOBIC Yellow Room

Specifications:

  • Light source: Ar ion laser, wavelength: 363nm, output: 180mW,
  • Maximum substrate size: 9 inch × 9 inch,
  • Maximum drawing size: 200 × 200 mm2,
  • Minimum drawing size: 1.0 mm,
  • Minimum address grid: 10 nm,
  • Drawing speed: 29 ~ 416 mm2 / minute,
  • 3D exposure mode,
  • Camera system for alignment,
  • Top and back side alignment,
  • Auto-focus write head,
  • Data formats: DXF, CIF, GDS-ll, Gerber, BMP, ASCII, STL,
  • Gray scale exposure.

Fee:

Regular fee: 15,200 yen / hour
Member’s fee: 7,600 yen / hour

Laser Direct Writing System DWL66fs

 

▲Top

Mask Aligner / Exposure Device

Manual Top and Bottom Side Mask Aligner, SUSS MA6 BSA
Manufacturer: SUSS MicroTec Inc.

Main applications and features:

  • Top/bottom side alignment,
  • Exposure methods: flood, proximiy, soft and hard contacts, low vacuum and vacuum contacts,
  • Diffraction reducing exposure optics, simultaneous exposure with a discrete number of ilumination angles that smoothen the printed features,
  • Significant improvement of resolution and yield steep walls,
  • Precise bottom side alignment,
  • Motorized topside aligment system providing a high precision submicron alignment accuracy.

Location: NANOBIC Yellow Room

Specifications:

    • Wafer size: up to 4 inches, irregular pieces,
    • Maximum substrate thickness:

– 1.5mm (when using vacuum contact),
– 3.0mm (when other exposure mode used),

  • Maximum mask thickness: 0.09 ”, 0.12 ” (recommended value),
  • Exposure mode: Proximity, vacuum contact, soft contact,
  • Hard contact alignment accuracy: ± 0.5mm (TSA) ± 0.1mm (BSA).

Fee:

Regular fee: 4,800 yen / hour
Member’s fee: 2,400 yen / hour

Mask Aligner SUSS MA6 BSA

 

▲Top

Nanoimprint Litography System

Nanoimprint Litography System, X-300
Manufacturer: SCIVAX Co.
Distributor: Yuasa Electronics Co., Ltd.

Main applications and features:

  • Nanoimprint litography for fabrication of nanometer scale patterns.

Location: NANOBIC Clean Room

Specifications:

  • Processing method: thermal embossing, UV-assisted embossing,
  • Transfer method: standard/direct pattern transfer,
  • Minimum template feature: 50nm,
  • Maximum mold size: φ6 inch (thermal), 100mm square (UV type),
  • The transfer material: UV-curable resin, thermoplastic resin, thermosetting resin,
  • Maximum operating temperature: 650 °C
  • Maximum loading force: 50kN
  • Stage speed: variable from 50nm/s to 15mm/s, backlash cancellation mechanism,
  • Maximum processing size: φ150mm
  • Substrate holder: vacuum adsorption
  • Light source: UV, wavelength 365nm / 385nm,
  • Processing size: effective irradiation area φ 100mm (thermal φ 150mm),
  • Maximum pressure: 2MPa,
  • Operating temperature: 100 °C max,
  • Vacuum function: vacuum chamber included, vacuum pressure up to 300Pa.

Fee:

Regular fee: 6000 yen / hour
Member’s fee: 3000 yen / hour

Nanoimaprint Litography System X-300

ETCHING

 

▲Top

Dry Etching System

High-Density Plasma Dry Etching System, NLD-570
Manufacturer: ULVAC, Inc.

Main applications and features:

  • Dry etching of quartz glass, Pyrex, LN, LT, metal oxide,
  • Low process pressure, high density plasma, low electron temperature etching process facilitated by Neutral Loop Discharge (NLD) plasma source,
  • High etching rates of quartz >1µm/min, Pyrex > 0.8µm/min,
  • Excellent uniformity control,
  • Good performance of deep SiO2 etching with photoresist,
  • Good profile control and surface roughness,

Location: NANOBIC Clean Room

Specifications:

  • Plasma source: Magnetic Neutral Loop Discharge (NLD),
  • Substrate size: Φ150mm,
  • High-frequency power source: 13.56MHz, 2kW RF power applied to the antenna, bias: 600W (12.5MHz)
  • Exhaust system: the etching chamber: TMP (2800L / sec) + DRP
  • Gas feeding system: CHF3, C3F8, SF6, C4F8, O2, Ar, N2, He
  • Other: loadlock chamber

Fee:

Regular fee: 11,800 yen / hour
Member’s fee: 5,900 yen / hour

Etching System NLD-570

 

▲Top

Dry Etching System

Inductively Coupled Plasma (ICP) Dry Etching System, PlasmaPro 100 ICP-180
Manufacturer: Oxford Instruments Co., Ltd.

Main applications and features:

  • Dry etching of InP, InGaAs, InAlAs and other compound semiconductors of groups III-V.

Location: NANOBIC Clean Room

Specifications:

  • Plasma source: inductively coupled plasma (ICP),
  • Upper electrode frequency: 13.56MHz, maximum output 3kW,
  • Lower electrode frequency: 13.56MHz, maximum output 300W, temperature control (20 ~ 400 ℃),
  • Wafer size: φ2 inches or less,
  • Multline gas pod: SF6, CH4, Cl2, H2, O2, Ar, N2, He,
  • Purpose: InP, InGaAs, III-V compound of InAlAs, etc.
  • Other: loadlock chamber.

Fee:

Regular fee: 15,400 yen / hour
Member’s fee: 7,700 yen / hour

PlasmaPro100 ICP-180

 

▲Top

High-Performance Focused Ion Beam System

High Performance Focused Ion Beam System, FB-2200
Manufacturer: Hitachi High Technologies

Main applications and features:

  • Allows for rapid and precise specimen preparation for both transmission and scanning electron microscopy (TEM/SEM),
  • Large processing area,
  • Low aberration ion optical system allows a maximum beam current of 60nA at an accelerating voltage of 40kV, resulting in high-speed and large area processing,
  • Low-damage specimen preparation with low accelerating voltage,
  • Site specific micro-sampling (in-situ lift out) preparation from bulk samples in a completly dry vacuum environment,
  • Encapsulation of milled sample into a protective atmoshpere for contamination-free transfer into an external analysis SEM/TEM.

Location: NANOBIC Clean Room

Specifications:

  • Accelerating voltage: 2 ~ 40kV,
  • Maximum beam current: 60nA or higher,
  • Maximum beam current density: 50A / cm2 or higher,
  • SIM resolution: 6nm or better (accelerating voltage 40kV),
  • Magnification range: 60 to 300,000 times,
  • Ion source: Gallium liquid metal ion source,
  • The objective lens aperture: CPU controlled motor driven,
  • Lens/deflector: Electrostatic 2-stage lens / Octopole electrostatic type,
  • Sample size: φ100 mm × 17 mm (height),
  • Deposition: two systems (tungsten, carbon),
  • Fabrication functions: Box and vector scan patterning fabrication, any shape possible,
  • Image acquisition: maximum 2,000 × 2,000 pixels.

Fee:

Regular fee: 20,600 yen / hour
Member’s fee: 10,300 yen / hour

Focused Ion Beam System FB-2200

 

▲Top

Silicon Deep Reactive Ion Etching (DRIE) System

Silicon Deep Reactive Ion Etching (DRIE) System
Manufacturer: Sumitomo Precision Products Co., Ltd.

Main applications and features:

  • High aspect ratio silicon deep reactive ion etching using the Bosch Process.

Location: NANOBIC Clean Room

Specifications:

  • Substrate size: 4 inches,
  • Etch rate: ~ 5μm / min,
  • Aspect ratio: ~ 40:1,
  • Uniformity: <± 5%,
  • Notch-free etching of high aspect Silicon on Insulator (SOI) structures,
  • Ramping of etching process parameters possible,
  • Etching through metal mask possible.

Fee:

Regular fee: 16,000 yen / hour
Member’s fee: 8,000 yen / hour

Silicon Deep Reactive Ion Etching (DRIE) System

ANALYSIS, IMAGING AND MEASUREMENT

▲Top

Environmental Scanning Electron Microscope

Thermionic Emission Environmental Scanning Electron Microscope Quanta 250 / EDS
Manufacturer: Nippon FEI
Distrubutor: Shimadzu Corporation Co.

Main applications and features:

  • Allows to analyze samples with controlled humidity and temperature (atmoshpere control), and to perform observations on samples heated up to 1000°C and detection of changes in the morphology of the material,
  • Deceleration of the electron beam over non-conductive samples can be performed leading to high resolution at lov accelerating voltages,
  • High- and low-vacuum SEM observation possible,
  • Environmental SEM for high-resolution imaging and composition analysis by energy-dispersive X-ray microanalysis (EDS).

Location: NANOBIC Clean Room

Specifications:

    • Electron gun: tungsten filament,
    • Resolution:

– 3.0 nm (high vacuum: high acceleration voltage 30kV),
– 8.0 nm (low vacuum: low accelerating voltage 3kV),
– 3.0 nm (ESEM),

    • Sample chamber vacuum:

– 6 × 10-4 Pa (high vacuum),
– 10 ~ 130 Pa (low vacuum),
– 10 ~ 2600 Pa (low vacuum),

    • Accelerating voltage: 0.2 ~ 30kV,
    • Irradiation current: up to 2mA,
    • Magnification: x6 ~ 1,000,000
    • Sample loader: vacuum interlocked loader with standard stub holders,
    • Sample size: φ 100mm, height 50mm max.
    • Detector:

– Secondary Electron Detector (SED):
– Everhart-Thornley Detector (ETD, scintillator type) (high vacuum),
– Large Field – Gaseous Secondary Electron Detector (LF-GSED type) (low vacuum),
– Gaseous Secondary Electron Detector (GSED type) (ultra-low vacuum),
– Semiconductor Backscattered Electron Detector

    • Accessory equipment:

– Infrared CCD camera,
– Heating stage (up to 1000 ℃), cooling stage (-20 ~ + 60 ℃),
– EDS (Oxford Instruments Co., Ltd.) INCA Energy250 x-act

Fee:

Regular fee: 9,400 yen / hour
Member’s fee: 4,700 yen / hour

Electron Microscope Quanta

 

▲Top

Atomic Force Microscope

Atomic Force Microscope, Dimension Icon
Manufacturer: Bruker AXS, Inc.

Main applications and features:

  • Closed-loop performance with very low noise level,
  • Reduced noise floor at less than 30pm enabling imaging at sub-nanometer resolution,
  • Low drift rates less than 200pm per minute for distortion-free imaging,
  • ScanAsyst Imaging optimization and PeakForce Tapping QNM feature,
  • Simplified surface characterization on any sample size, multipole samples or types.

Location: NANOBIC Room 102

Specifications:

  • x-y scanning range: 85 × 85mm, z range: 9mm,
  • Sample size: 210 mm (diameter), 15mm (height) maximum,
  • Mode: contact mode, non-contact mode, AC mode (Tapping Mode), Torsional Resonance Mode (TR)
  • Features: nanolithography (Anodic Oxidation Litography, scratch nanolitography),nanoindentation, Electrostatic Force Microscopy (EFM), Magnetic Force Microscopy (MFM)

Fee:

Regular fee: 3,200 yen / hour
Member’s fee: 1,600 yen / hour

Atomic Force Microscope

 

▲Top

Scanning Electron Microscope

3D Real Surface View Microscope VE-8800
Manufacturer: Keyence Corp.

Main applications and features:

  • VSEM imaging of objects,
  • Low acceleration voltage allows for SEM imaging of nonconductive specimen without the need for coating with electrically conductive layer, while the low energy of electron beam reveals fine details of specimen structure,
  • High-quality qualitative and quantitative 3D reconstruction of specimen surfaces from sets of stereoscopic SEM images produced using the eucentric tilt capability of the sample stage.

Location: NANOBIC Room 1007

Specifications:

  • Magnification: 15-100000 times,
  • Observation area: 9mm (H) × 7mm (V) ~ 1.3 (H) × 1 (V) mm,
  • Resolution: 30nm,
  • Observation image: secondary electron image and backscattered electron image,
  • Observation mode: high vacuum and low vacuum (3 ~ 260 Pa),
  • Image resolution: 640 (H) × 480 (V) (observation), 1280 (H) × 960 (V) (during imaging),
  • Frame rate: 4.5 fps (observation),
  • Acceleration voltage: 0.5kV ~ 20kV,
  • Electron gun: tungsten hairpin filament, pre-adjusted in plug-in cartridge,
  • Maximum sample size: φ64mm,
  • Sample stage: 5-axis (X · Y · Z · rotation and tilt), eucentric mode (motorized XY-axis),
  • X: 32mm · Y: 32mm · Z: 8 ~ 30mm · Rotation: 360° · tilt: -10 ~ + 90°.

Fee:

Regular fee: 2,000 yen / hour
Member’s fee: 1,000 yen / hour

3D Real Surface View Microscope

 

▲Top

Cross Section Specimen Preparation Device

Cross Section Specimen Preparation Device SM-09020
Manufacturer: JEOL, Ltd.

Main applications and features:

  • Cross-section preparation and polishing,
  • Cleaning of polished cross section of hard, soft and composite materials, such as: copper, aluminum, gold, solder, polymer, ceramic, glass,
  • Preparation of sample for energy-dispersive X-ray spectroscopy (EDS), wavelength dispersive X-ray spectroscopy (WDS), electron backscatter diffraction (EBSD), surface analysis and multi-layer film thickness spectrometric measurements.

Location: NANOBIC Room 1007

Specifications:

  • Ion accelerating voltage: 2 to 6kV,
  • Ion beam diameter: 500µm (full width at half maximum),
  • Milling speed: 1.3µm / min (at accelerating voltage: 6kV, specimen: silicon, 100µm from edge),
  • Maximum specimen size: 11mm (width) × 10mm (length) × 2mm (height),
  • Specimen movement range: X-axis: ± 3mm, Y-axis: ± 3mm,
  • Gas: Argon,
  • Pressure measurement: Penning vacuum gauge.

Fee:

Regular fee: 2,000 yen / hour
Member’s fee: 1,000 yen / hour

Cross Section Specimen Preparation Device

 

▲Top

Super-resolution Laser Microscope

Super-resolution Laser Microscope TCS STED-CW
Manufacturer: Leica Microsystems Co., Ltd.

Main applications and features:

  • Observation of subcellular structures in detail,
  • Super-resolution fluorescent imaging of living cells in nanoscale.

Location: NANOBIC Clean Room

Specifications:

  • Objective lens: x10, x63 (oil), x100 (oil),
  • Maximum frame size: 1024 × 1024 pixels,
  • STED laser (excitation): internal Argon gas laser (continuous wave), variale excitation wavelenght: 458, 476, 488, 496, 514, 633nm,
  • STED laser (depletion): visible fiber laser, wavelength 592nm, up to 1.5W,
  • x-y spatial resolution: 80nm,
  • Recording speed: 20 frames / sec.
  • Detector: Avalanche photodetector (APD).

Fee:

Regular fee: 5,400 yen / hour
Member’s fee: 2,700 yen / hour

Super-resolution Laser Microscope

 

▲Top

Accelerated Surface Area and Porosimetry System

Accelerated Surface Area and Porosimetry System ASAP 2020
Manufacturer: Micrometrics/Shimadzu Corporation Ltd.

Main applications and features:

  • Surface area and porosimetry measurements,
  • Adsorption and desorption analysis using a wide variety of adsorptives.

Location: Location: NANOBIC Room 1008

Specifications:

    • Measurement method: gas adsorption by constant volume method,
    • Pressure measurement range: 0 ~ 127kPa (950mmHg),
    • Pressure measurement resolution:

– 127kPa (950mmHg) range – 0.133 Pa (0.001 mmHg),
– 1.333kPa (10mmHg) range – 1.33 mPa (0.00001 mmHg),
– 133.3Pa (1mmHg) range – 0.133 mPa (0.000001 mmHg),

    • Pressure measurement accuracy:

– 127 kPa (950mmHg) range – within 0.15% of reading,
– 1.333kPa (10mmHg) range – within 0.15% of reading,
– 133.3Pa (1mmHg) range – within 0.12% of reading,

  • Specific surface area measurement range: 0.001m2/ g or more (when Krypton is used),
  • Mesopore distribution measurement range: a diameter of about 1 ~ 100nm (Nitrogen, BJH method),
  • Pore size distribution measurement range: ca. 0.4 ~ 2nm (Micropore module),
  • Adsorptive gas: N2, Ar, Kr, CO, CO2, H2, others.

Software features:

(1) Chemisorption module: surface characterization analzis of catalytic materials, active metal area, heat of chemical adsorption, crystallite size, strong and weak chemisorption, active metal dispersion,

(2) Physisorption module:

– single- and multi-point BET (Brunauer, Emmet, ald Teller) surface area,
– Langmuir surface area,
– Temkin and Freundlich isotherm analysis,
– Pore volume and pore area distribution in the mesopore and macropore ranges by the BJH (Barret, Joyner, and Halenda) method using a variety of thickness equations including a user-defined, standard isotherm,
– Pore volume and total pore volume in a user-defined pore size range,
– Micropore distribution by the MP method and total micropore volume by the t-Plot and Plot methods,
– f-ratio plots that illustrates the difference between theoretical and experimental isotherm data,
– Heat of ddsorption

(3) Micropore module:

– high resolution distributions of micropore volume and area by pore size, based on following models: Dubinin-Radushkevich (D-R), Dubinin-Astakhov (D-A), Horvath-Kawazoe (H-K), H-K with Cheng & Yang correction for slit-shaped pores and H-K with Saito & Foley model for cylindrical pores.

Fee:

Regular fee: 8,000 yen / hour
Member’s fee: 4000 yen / hour

ASAP 2020

 

▲Top

Optical Profiler

Ultra-high Resolution Optical Profiling System WYKO NT9100A
Manufacturer: Bruker AXS, Inc

Main applications and features:

  • Accurate surface topography measurement,
  • Non-contact, three-dimensional, surface topography and film thickness measurement capability,
  • Sub-nanometer resolution for roughness analysis of super-smooth surfaces,
  • Large Z-range for extremaly high step measurements,
  • High-resolution measurements of samples through dispersive material.

Location: NANOBIC Clean Room

Specifications:

  • Measurement modes: vertical scanning interferometry (VSI) mode measurements, ultra-high precision phase shifting interferometry (PSI) mode measurements, phase image + vertical scanning interferometry (HD-VSI) mode measurements, intensity measurements,
  • Vertical measurement range: 0.1nm ~ 10mm,
  • Vertical resolution:
  • Objective lens: x5, x50,
  • Sample stage: 6 inches,
  • Dynamic esurface metrology (corresponding frequency range: 11Hz ~ 2.4MHz), film thickness evaluation (film thickness: 2 ~ 200mm, vertical resolution: 5nm).

Fee:

Regular fee: 3,000 yen / hour
Member’s fee: 1,500 yen / hour

Optical Profiler WYKO NT9100A

 

▲Top

Surface Tension & Contact Angle Meter

Surface Tension & Contact Angle Meter, Drop Master DM500
Manufacturer: Kyowa Interface Science Co., Ltd.

Main applications and features:

  • Contact angle and surface tension measurement.

Location: NANOBIC Clean Room

Specifications:

  • Measurement system: CCD camera,
  • Measurement method: sessile drop method (contact angle), pendant drop method (surface tension),
  • Analysis method: θ / 2 method, tangent method, curve fitting (ellipse and circle) (contact angle),
  • Young-Laplace method (surface tension),
  • Measurement range: 0 ~ 180 ° (contact angle), 0 ~ 80mN / m (surface tension),
  • Measurement accuracy: ± 1 ° (contact angle, θ / 2 method),
  • Display resolution: 0.1 ° (contact angle), 0.1mN / m (surface tension).

Fee:

Regular fee: 1,400 yen / hour
Member’s fee: 700 yen / hour

Drop Master DM500

 

▲Top

Gas Permeability Measurement System

Gas Permeability Measurement System GTR-21 AXKU
Production: GTR-Tech Co., Ltd.

Main applications and features:

  • Simultaneous measurements of permeation of single and blended gases under dry and humid condition.

Location: NANOBIC Room 1008

Specifications:

  • Test gas: nitrogen, oxygen, carbon dioxide, gas blend, vater vapor,
  • Test gas supply pressure: -100 ~ 600kPa,
  • Specimen size: permeation area 15.2cm2 (φ44mm),
  • Humidity range: 0-100%,
  • Cell temperature adjustment range: 10 ℃ ~ 80 ℃,
  • Detection method: with TCD gas chromatograph and calibration curve.

Fee:

Regular fee: 3,400 yen / hour
Member’s fee: 1,700 yen / hour

Gas Permeability Measurement System

 

▲Top

Spectrometric Film Thickness Measurement System

Spectrometric Film Thickness Measurement System VM-1200
Manufacturer: Screen Semiconductor Solutions Co., Ltd.

Main applications and features:

  • Film thickness measurement,
  • Simultaneous multi-layer measurements for up to 4 layers of film,
  • Capable of performing refractive index measurements (on one layer of a sample with up to 4 layers).

Location: NANOBIC Yellow Room

Specifications:

  • Spectroscope: flat field holographic concave grating and one-dimensional CCD image sensor, which can simultaneously measure over 2,000 sampling points across the full range of wavelengths in the visible light range,
  • Objective lens: x5, x10, x20, x50,
  • Sample size: up to φ200mm,
  • Film thickness measurement range: 10~40,000nm (at x10),
  • Accuracy: 0.1nm.

Fee:

Regular fee: 2,400 yen / hour
Member’s fee: 1,200 yen / hour

Spectrometric Film Thickness Measurement System

 

▲Top

Laser 3D Profile Microscope

Laser 3D Profile Microscope VK-8510
Manufacturer: Keyence Corp.

Main applications and features:

  • Color Laser 3D profile microscope,
  • Infinite depth of field for both magnified observation and profile measurement.

Location: NANOBIC Clean Room

Specifications:

  • Highest spatial resolution: 0.01 μm in both vertical and horizontal directions,
  • Display resolution: 962 × 729 pixels (color), 1024 × 768 pixels (monochrome),
  • Frame memory: 1024 × 768 × 8 bit × 3 frames (color), 1024 × 768 × 8 bit (monochrome), 1024 × 768 × 20 bit (height measurements),
  • Frame rate: 6 Hz (color), 9 Hz (monochrome) surface scan, 1 kHz (line scan and roughness),
  • Light source for optical observation: 50 W halogen lamp, color temperature 3000 K,
  • Measurement laser light source: semiconductor laser, wavelength 685 nm, output 0.45 mW.

Fee:

Regular fee: 1,600 yen / hour
Member’s fee: 800 yen / hour

Laser 3D Profile Microscope

 

▲Top

High Speed Camera

High Speed Camera FASTCAM SA2
Manufacturer: Photo Ron Co.

Main applications and features:

  • The high-speed camera, from 1,000 fps (12-bit full resolution) up to 86,400 fps (at reduced resolution),
  • Incorporates Peltier temperature stabilized sensor and on-chip microlens array for optimum image quality and light sensitivity.

Location: KBIC Room 212

Specifications:

  • 2,048 x 2,048 pixels @ 1,080 fps,
  • 1,920 x 1,080 pixels @ 2,000 fps (Full HD),
  • 1,024 x 1,024 pixels @ 3,200 fps,
  • Low-light mode for initial set up of camera position and focus,
  • Monochrome or color sensor captures 12-bit (36-bit color) uncompressed data,
  • Sensor: 10 μm pixels, temperature stabilized, 12-bit ADC (Bayer system color, single sensor) with microlenses,
  • Shutter: Global electronic shutter from 16.7 ms to 2.76 μs independent of frame rate,
  • Triggering: Selectable positive or negative TTL 5Vp-p or switch closure.

Fee:

Regular fee: 1,600 yen / hour
Member’s fee: 800 yen / hour

High Speed Camera

 

▲Top

Femtosecond Streak Camera

Femtosecond Streak Camera FESCA-200
Manufacturer: Hamamatsu Photonics Co., Ltd.

Main applications and features:

  • Research of the process of energy relaxation of quantum well semiconductors,
  • Research of the dynamics of chemical reactions in the femtosecond region,
  • Research of the dynamics of ultra fast laser diodes, optical logic devices and other photonic devices.

Location: NANOBIC Room 1008

Specifications:

  • Temporal resolution: single-shot 200 fs (fastest range), 500 fs or less (typ., wavelength 500 nm),
  • Effective phosphor screen size: approx. 10mm (time axis), approx. 9mm (spatial axis),
  • Simultaneous measurement of light intensity on both the temporal and spatial axis,
  • Sweep time: 20 ps, 50 ps, 100 ps, 200 ps, 500 ps, 1 ns,
  • Trigger jitter: less than ± 20 ps,
  • Trigger delay: approx. 30 ns (at the fastest sweep range),
  • Sweep repetition frequency: single to 100 Hz max.

Fee:

Regular fee: 1,600 yen / hour
Member’s fee: 800 yen / hour

Femtosecond Streak Camera

 

▲Top

Micro ELISA

Micro ELISA IMT-501
Manufacturer: Institute of Microchemical Technology Co., Ltd.

Main applications and features:

  • Fully automated immunoassay system featuring a non-competitive sandwich method, also compatible with methods based on a competetive binding reaction,
  • Equipped with a high sensitive thermal lens detector,
  • Ultra-small volume of specimen: 1µL,
  • Low running cost, rapid measurement 8 minutes per sample,
  • Ultra-high sensitivity measurement: detection limit of 3 × 10-8 Abs.

Location: KBIC 102

Specifications:

  • Measurement principle: thermal lens detection (excitation wavelength: 635nm, detection wavelength: 785nm),
  • Enzyme-Linked Immunosorbent Assay ELISA (micro chip immunoassay),
  • Thermal lens detection limit: 3 × 10-8 Abs. (Ni complex aqueous solution),
  • Sample volume: 1~20µL (minimum required sample volume: 5µL),
  • Measurement accuracy: 8% CV,
  • Volume of waste liquid: 200µL per sample.

Fee:

Regular fee: 3,000 yen / hour
Member’s fee: 1,500 yen / hour

 

▲Top

Microchip Experimental Station

Microchip Experimental Station
Manufacturer: Institute of Microchemical Technology Co., Ltd.

Main applications and features: High sensitivity measurement station for biochip analyzis.

Location: KBIC Room 102

Fee:

Regular fee: 3,400 yen / hour
Member’s fee: 1,700 yen / hour

 

▲Top

Bio Laboratory Equipment

Bio Laboratory Equipment

Main applications and features:

  • Microbiological safety cabinet (MCV-B91F) (2 units),
  • Celkl culture CO2 incubator (MCO-18A1C) (2 units),
  • Pharmacy refrigerator,
  • Laboratory freezers: -20°C (1 unit), -80°C (1 unit),
  • A can and cane liquid nitrogen cryopreservation system (Bio-cane 20),(1 unit),
  • Others, such as: autoclave, centrifuge, fluorescence microscope equipped with high sensitivity camera.

Location: KBIC Room 102

Fee:

Regular fee: 1,600 yen / hour
Member’s fee: 800 yen / hour